APTGT200A120G APTGT200A120G ? rev 1 july, 2006 www.microsemi . com 1 - 5 absolute maximum ratings these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. see application note apt0502 on www.microsemi.com q2 0/vb us q1 vb us out g1 g2 e2 e1 out vbus e1 g1 0/vbus g2 e2 s ymbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 280 i c continuous collector current t c = 80c 200 i cm pulsed collector current t c = 25c 400 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 890 w rbsoa reverse bias safe operating area t j = 125c 400a @ 1100v v ces = 1200v i c = 200a @ tc = 80c appl i catio n ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? fast trench + field stop igbt ? technology - low voltage drop - low tail current - switching freque nc y up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile ? rohs compliant phase leg fast trench + field stop igbt ? power modul e
APTGT200A120G APTGT200A120G ? rev 1 july, 2006 www.microsemi . com 2 - 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 350 a t j = 25c 1.4 1.7 2.1 v ce(sat) collector emitter saturation voltage v ge =15v i c = 200a t j = 125c 2.0 v v ge(th) gate threshold voltage v ge = v ce , i c = 3 ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 500 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 14 c oes output capacitance 0.8 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 0.6 nf t d(on) turn-on delay time 260 t r rise time 30 t d(off) turn-off delay time 420 t f fall time inductive switching (25c) v ge = 15v v bus = 600v i c = 200a r g = 2.7 ? 70 ns t d(on) turn-on delay time 290 t r rise time 50 t d(off) turn-off delay time 520 t f fall time inductive switching (125c) v ge = 15v v bus = 600v i c = 200a r g = 2.7 ? 90 ns e on turn on energy t j = 125c 20 e off turn off energy v ge = 15v v bus = 600v i c = 200a r g = 2.7 ? t j = 125c 20 mj reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 350 i rm maximum reverse leakage current v r =1200v t j = 125c 600 a i f dc forward current tc = 80c 200 a t j = 25c 1.6 2.1 v f diode forward voltage i f = 200a v ge = 0v t j = 125c 1.6 v t j = 25c 170 t rr reverse recovery time t j = 125c 280 ns t j = 25c 18 q rr reverse recovery charge t j = 125c 36 c t j = 25c 10 e r reverse recovery energy i f = 200a v r = 600v di/dt =2500a/s t j = 125c 18 mj
APTGT200A120G APTGT200A120G ? rev 1 july, 2006 www.microsemi . com 3 - 5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.14 r thjc junction to case thermal resistance diode 0.25 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c to heatsink m6 3 5 torque mounting torque for terminals m5 2 3.5 n.m wt package weight 280 g sp6 package outline (dimensions in mm) see application note apt0601 - mounting instructions for sp6 power modules on www.microsemi.com
APTGT200A120G APTGT200A120G ? rev 1 july, 2006 www.microsemi . com 4 - 5 typical performance curve output characteristics (v ge =15v) t j =2 5c t j =125c 0 100 200 300 400 01234 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =17v v ge =9v 0 100 200 300 400 01234 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c t j =125c 0 50 100 150 200 250 300 350 400 5 6 7 8 9 101112 v ge (v) i c (a) energy losses vs collector current eon eon eoff er 0 10 20 30 40 50 0 50 100 150 200 250 300 350 400 i c (a) e (mj) v ce = 600v v ge = 15v r g = 2.7 ? t j = 125c eo n eo ff er 0 10 20 30 40 50 048121620 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 200a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 50 100 150 200 250 300 350 400 450 0 300 600 900 1200 1500 v ce (v) i f (a) v ge =15v t j =125c r g =2.7 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
APTGT200A120G APTGT200A120G ? rev 1 july, 2006 www.microsemi . com 5 - 5 forward characteristic of diode t j =25c t j =125c t j =125c 0 50 100 150 200 250 300 350 400 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) hard switching zcs zvs 0 10 20 30 40 50 60 0 40 80 120 160 200 240 280 i c (a) fmax, operating frequency (khz) v ce =600v d= 50% r g =2.7 ? t j =125c tc=75c operating frequency vs collector curren t maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode m icros e mi re se rve s the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in microsemi's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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